A method of forming minimally spaced word lines is described. A double exposure technique is employed at the gate formation level. A small trench is defined through gate stack layers by using a tapered etch or spacers to achieve the desired width of the trench. A filler material fills the trench and...http://www.google.fr/patents/US6844594?utm_source=gb-gplus-shareBrevet US6844594 - Minimally spaced gates and word lines
