The invention can include at least one storage cell having a store gate structure formed from a semiconductor material doped to a first conductivity type and in contact with a channel region comprising a semiconductor material doped to a second conductivity type. A storage cell can also include at least...http://www.google.fr/patents/US7692220?utm_source=gb-gplus-shareBrevet US7692220 - Semiconductor device storage cell structure, method of operation, and method of manufacture
Semiconductor device storage cell structure, method of operation, and method ...
