The present invention provides a phase change memory cell comprising (GeASbBTeC)1-X(RaSbTeC)X solid solution, the solid solution being formed from a Ge—Sb—Te based alloy and a ternary metal alloy R—S—Te sharing same crystal structure as the Ge—Sb—Te based alloy. A nonvolatile phase change...http://www.google.fr/patents/US7233054?utm_source=gb-gplus-shareBrevet US7233054 - Phase change material and non-volatile memory device using the same
Phase change material and non-volatile memory device using the same
