An LDMOS structure is formed in a region of a first type of conductivity of a semiconductor substrate and comprises a gate, a drain region and a source region. The source region is formed by a body diffusion of a second type of conductivity within the first region, and a source diffusion of the first...http://www.google.fr/patents/US6538281?utm_source=gb-gplus-shareBrevet US6538281 - Low on-resistance LDMOS
