A process for bonding oxide-free silicon substrate pairs and other substrates at low temperature. This process involves modifying the surface of the silicon wafers to create defect regions, for example by plasma-treating the surface to be bonded with a or boron-containing plasmas such as a B2H6 plasma....http://www.google.fr/patents/US7332410?utm_source=gb-gplus-shareBrevet US7332410 - Method of epitaxial-like wafer bonding at low temperature and bonded structure
Method of epitaxial-like wafer bonding at low temperature and bonded structure
