A method of manufacturing a semiconductor device comprises, in patterning of a conductive film having a grain boundary on a very thin dielectric film, a first etching step of carrying out anisotropic etching until most of the conductive film in a flat portion disappears, and a second etching step of...http://www.google.fr/patents/US7265058?utm_source=gb-gplus-shareBrevet US7265058 - Method of manufacturing semiconductor device
