A semiconductor light emitting device of double hetero junction includes an active layer and clad layers. The clad layers include an n-type layer and p-type layer. The clad layers sandwich the active layer. A band gap energy of the clad layers is larger than that of the active layer. The band gap energy...http://www.google.fr/patents/US6996150?utm_source=gb-gplus-shareBrevet US6996150 - Semiconductor light emitting device and manufacturing method therefor
Semiconductor light emitting device and manufacturing method therefor
