Two problems seen in CMP as currently executed are a tendency for slurry particles to remain on the surface and the formation of a final layer of oxide. These problems have been solved by adding to the slurry a quantity of TMAH or TBAH. This has the effect of rendering the surface being polished hydrophobic....http://www.google.fr/patents/US7125802?utm_source=gb-gplus-shareBrevet US7125802 - CMP process leaving no residual oxide layer or slurry particles
CMP process leaving no residual oxide layer or slurry particles
