The use of atomic layer deposition (ALD) to form a nanolaminate layered dielectric layer of praseodymium oxide (PrXOY) and zirconium oxide (ZrOZ) and a method of fabricating such a combination gate and dielectric layer produces a reliable structure for use in a variety of electronic devices. The nanolaminate...http://www.google.fr/patents/US20060125030?utm_source=gb-gplus-shareBrevet US20060125030 - Hybrid ALD-CVD of PrxOy/ZrO2 films as gate dielectrics
Hybrid ALD-CVD of PrxOy/ZrO2 films as gate dielectrics
