The method of fabricating the semi-conductor device includes forming a center dielectric region on a substrate. The center dielectric region has a first thickness and the substrate includes a first conductive material. Then, a first plurality of spacers is formed near the center dielectric region. A...http://www.google.fr/patents/US6329687?utm_source=gb-gplus-shareBrevet US6329687 - Two bit flash cell with two floating gate regions
