A method of manufacturing an inverse-staggered self-aligned thin film transistor on a substrate having a front surface and a back surface is provided. The method includes the steps of (a) forming a gate electrode over the front surface of the substrate,(b) forming a gate insulating layer over the gate...http://www.google.fr/patents/US5989944?utm_source=gb-gplus-shareBrevet US5989944 - Method of fabricating self-aligned thin film transistor using laser irradiation
Method of fabricating self-aligned thin film transistor using laser irradiation
