A nitride semiconductor light-emitting device according to the present invention includes a nitride based semiconductor substrate 10 and a nitride based semiconductor multilayer structure that has been formed on the semiconductor substrate 10. The multilayer structure includes an active layer 16 that...http://www.google.fr/patents/US8044430?utm_source=gb-gplus-shareBrevet US8044430 - Nitride semiconductor light-emitting device comprising multiple semiconductor layers having substantially uniform N-type dopant concentration
