A method for operating a nitride-based flash memory is provided. The operation method includes pre-performing an interference reduction operation (IRO) before the routine programming operating step. Through bias arrangement of the target memory cell, charges are injected into the charge trapping layer...http://www.google.fr/patents/US7826262?utm_source=gb-gplus-shareBrevet US7826262 - Operation method of nitride-based flash memory and method of reducing coupling interference
Operation method of nitride-based flash memory and method of reducing ...
