In a method of manufacturing a semiconductor device, a first insulating film is formed on a semiconductor substrate, a first conductive film is formed on the first insulating film, and a second insulating film is formed on the first conductive film. An opening is formed to the semiconductor substrate...http://www.google.fr/patents/US6337251?utm_source=gb-gplus-shareBrevet US6337251 - Method of manufacturing semiconductor device with no parasitic barrier
Method of manufacturing semiconductor device with no parasitic barrier
