Phase-change memory (PCM) cells store data using alloy resistors in high-resistance amorphous and low-resistance crystalline states. The memory cell's reset current can be double a set current, causing peak currents to depend on write data. When all data bits are reset to the amorphous state, a very...http://www.google.fr/patents/US7440316?utm_source=gb-gplus-shareBrevet US7440316 - 8/9 and 8/10-bit encoding to reduce peak surge currents when writing phase-change memory
8/9 and 8/10-bit encoding to reduce peak surge currents when writing phase ...
