A method for heteroepitaxial growth and the device wherein a single crystal ceramic substrate, preferably Y stabilized zirconia, MgAl.sub.2 O.sub.4, A1.sub.2 O.sub.3, 3C--SiC, 6H--SiC or MgO is cut and polished at from about 1.0 to about 10 degrees off axis to produce a substantially flat surface. The...http://www.google.fr/patents/US6083812?utm_source=gb-gplus-shareBrevet US6083812 - Heteroepitaxy by large surface steps
