A method of making a semiconductor device having formed thereon an inductor comprises a silicon substrate. A cut out region is obtained by removing a part of the silicon substrate in a hollow shape which may be a hollow cavity or a hollow cavity with an insulating material having a low complex permittivity...http://www.google.fr/patents/US5384274?utm_source=gb-gplus-shareBrevet US5384274 - Method of making a combined semiconductor device and inductor
Method of making a combined semiconductor device and inductor
