High power semiconductor lasers with ridge waveguide structure

(54) HIGH POWER SEMICONDUCTOR LASERS WITH RIDGE WAVEGUIDE STRUCTURE

(75) Inventors: Jung Kee Lee; Kyung Hyun Park;

Dong Hoon Jang; Chul Soon Park, all

of Daejeon (KR)

(73) Assignees: Electronics and Telecommunications Research Institute, Daejeon; Korea Telecom, Seoul, both of (KR)

( * ) Notice: Subject to any disclaimer, the term of this patent is extended or adjusted under 35 U.S.C. 154(b) by 0 days.

(21) Appl. No.: 09/119,391

(22) Filed: Jul. 21, 1998

(30) Foreign Application Priority Data

Sep. 29, 1997 (KR) 97-49766

(51) Int. CI.7 H01S 5/10; H01S 5/16

(52) U.S. C I 372/46

(58) Field of Search 372/46

(56) References Cited

U.S. PATENT DOCUMENTS

5,043,291 8/1991 Devoldere et al 437/24

5,160,492 11/1992 Wang et al 437/22

5,469,457 11/1995 Nagai et al 372/45

5,815,522 * 9/1998 Nagai 372/46

5,870,419 * 2/1999 Nakayama 372/46

OTHER PUBLICATIONS

F.R. Gfeller et al, "High-Power Single-Mode AiGaAs Lasers with Bent-Waveguide Nonabsorbing Etched Mirrors", 1992 American Institute of Physics, Sep. 15,1992, pp. 2131-2135.

M. Sagawa et al., "High-Power, Highly-Reliable Operation of InGaAs/InGaAsP 0.98fim Lasers with an Exponential-Shaped Flared Stripe", Electronic Letters, vol. 32, No. 24, Nov. 21, 1996, pp. 2277-2279.

* cited by examiner

Primary Examiner—-James W. Davie

(74) Attorney, Agent, or Firm—Jacobson Holman PLLC

(57) ABSTRACT

A 0.98 fim semiconductor laser of a ridge waveguide (RWG) structure includes: to be lengthen the durability of a semiconductor laser by increasing a catastrophic optical damage (COD) level, a ridge having a fixed width and length so that the strip may stop in the position of 30 fim on the basic of end portion of an output facet along length direction of a resonator; and a non-waveguide region in the end portion of both sides of a resonator.

4 Claims, 10 Drawing Sheets