United States Patent [19] [11] Patent Number: 4,871,580
Schram et al. [45] Date of Patent: Oct. 3, 1989
[54] METHOD OF TREATING SURFACES OF SUBSTRATES WITH THE AID OF A PLASMA
[75] Inventors: Daniel C. Schram; Gerardus M. W.
Kroesen, both of MB Eindhoven,
Netherlands
[73] Assignee: Faculty of Physics Eidhoven
University of Technology,
Eindhoven, Netherlands
[21] Appl. No.: 206,181
[22] Filed: Jun. 13,1988
[30] Foreign Application Priority Data
Jun. 30, 1987 [NL] Netherlands 8701530
[51] Int. CIS B05D3/06
[52] U.S, CI 427/38; 427/47
[58] Field of Search 427/38, 47
[56] References Cited
PUBLICATIONS
Plasma-Assisted Chemical Vapor Deposition Processes
and their Semiconductor Application, Thin Solid Films, 113 (1984) 135-149.
A New Approach of Plasma Deposition, G. M. W. Kroesen et al., ISPC-7 Conference, Jul. 1985, pp. 698-703.
Physics of Plasma Etching and Plasma Deposition, D. C. Schram et al., pp. 181-187, SASP-Proceedings, 1986.
Primary Examiner—Bernard Pianalto
Attorney, Agent, or Firm—Rosen, Dainow & Jacobs
[57] ABSTRACT
A method of treating substrate surfaces with the aid of a plasma such as etching, deposition etc. In the practice of the method, the plasma flows from its place of generation to the treatment-chamber, and in which method the plasma-generator is flushed through with a flushing gas. Preferably, and firstly after the flushing gas has passed the cathodes, the reactant is fed to the plasmagenerator. The invention includes the reactor necessary for carrying out the method.
19 Claims, 4 Drawing Sheets
