[54] METHOD OF RECRYSTALLIZING A
POLYCRYSTALLINE, AMORPHOUS OR
SMALL GRAIN MATERIAL
[75] Inventor: Yoshinori Hayafuji, Tokyo, Japan
[73] Assignee: Sony Corporation, Tokyo, Japan
[21] Appl. No.: 492,800
[22] Filed: May 9, 1983
[51] Int. Q.4 C30B1/08
[52] U.S. CI 156/617 R; 156/DIG. 73;
156/DIG. 102; 427/43.1; 427/86; 148/1.5
[58] Field of Search 156/617 R, DIG. 102,
156/DIG. 73, DIG. 80; 148/1.5; 29/576 B, 576 T; 427/43.1, 86; 250/492.3, 492.2; 219/121 EB;
357/23 TF
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4,358,326 11/1982 Doo 427/86
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OTHER PUBLICATIONS
H. Schaber, D. Cutter, and W. M. Werner, Laser Annealing Study of the Grain Size Effect in Polycrystalline Silicon Schottky Diodes, J. Appl. Phys. 53 (12), Dec. 1982, pp. 8827-8834.
Primary Examiner—David L. Lacey
Attorney, Agent, or Firm—Lewis H. Eslinger; Alvin
Sinderbrand
[57] ABSTRACT
For recrystallizing a layer of polysilicon extending over a layer of silicon dioxide on a substrate of silicon single crystal, the silicon dioxide layer is interrupted at seeding locations which are spaced apart in at least one direction and at which the polysilicon layer comes into contact with the substrate, an electron beam of generally strip-shaped cross section is impacted on the polysilicon layer where the beam is focused into a fine impact line of intense energy extending transverse to the one direction in which the seeding locations are spaced apart, the substrate and electron beam are relatively displaced in a direction transverse to the impact line so that the impact line of the beam relatively scans at least a portion of the polysilicon layer transversely to the direction in which the seeding locations are spaced apart, and the speed with which the impact line relatively scans the polysilicon layer is determined so that the polysilicon layer is subjected to zone melting at the impact line of the electron beam for growing silicon single crystals by lateral epitaxial recrystallization of the polysilicon from the seeding locations.
43 Claims, 14 Drawing Figures
