A spin dependent tunneling ("SDT") junction of a memory cell for a Magnetic Random Access Memory ("MRAM") device includes a pinned ferromagnetic layer, followed by an insulating tunnel barrier and a sense ferromagnetic layer. During fabrication of the MRAM device, after formation of the pinned layer...http://www.google.fr/patents/US20020047145?utm_source=gb-gplus-shareBrevet US20020047145 - MRAM device including spin dependent tunneling junction memory cells
MRAM device including spin dependent tunneling junction memory cells
Numéro de demande: 09/981,277 Numéro de publication: US 2002/0047145 A1 Date de dépôt: 17 oct. 2001 Brevet délivré: US6885049 ( Date de délivrance 26 avr. 2005)
