(54) PARTIAL FINFET MEMORY CELL
(75) Inventor: Jhon-Jhy Liaw, Hsin-Chu (TW)
(73) Assignee: Taiwan Semiconductor Manufacutring Company, Ltd., Hsin-Chu (TW)
( * ) Notice: Subject to any disclaimer, the term of this patent is extended or adjusted under 35 U.S.C. 154(b) by 21 days.
(21) Appl.No.: 11/588,483
(22) Filed: Oct. 27, 2006
(65) Prior Publication Data
US 2008/0105932 Al May 8, 2008
Related U.S. Application Data
(60) Provisional application No. 60/849,047, filed on Oct. 2, 2006.
(51) Int. CI.
H01L 27/092 (2006.01)
(52) U.S. CI 257/371; 257/374; 257/401;
257/E27.062
(58) Field of Classification Search 257/371,
257/374, 401, 903, 904, E27.062, E27.067,
257/E27.098 See application file for complete search history.
