[54] METHOD AND APPARATUS FOR
DEPOSITING HIGHLY ORIENTED AND
REFLECTIVE CRYSTALLINE LAYERS
USING A LOW TEMPERATURE SEEDING
LAYER
[75] Inventors: Ted Tie Guo, Palo Alto; Mehul
Bhagubhai Naik; Liang-Yu Chen, both of San Jose; Roderick Craig Mosely, Pleasanton; Israel Beinglass,
Sunnyvale, all of Calif.
[73] Assignee: Applied Materials, Inc., Santa Clara, Calif.
[21] Appl. No.: 08/736,629 [22] Filed: Oct. 24, 1996
Related U.S. Application Data
[63] Continuation-in-part of application No. 08/611,108, Mar. 5, 1996.
[51] Int. CI.7 G06F 17/00; G07F 15/02
[52] U.S. CI 364/468.28; 364/468.22;
364/468.23; 364/468.24; 364/468.26; 438/723; 438/784; 438/699; 427/99; 427/250; 427/255.11;
427/255.12
[58] Field of Search 364/468.22, 468.23,
364/468.24, 468.26, 468.28, 469.02, 472.09, 472.06; 427/250, 255, 255.11, 255.12, 248.1, 99, 97, 255.1, 255.2, 255.7, 252; 437/207, 200, 238, 235, 101; 156/613, 610, 614;
438/699, 723, 784
[56] References Cited
U.S. PATENT DOCUMENTS
5,108,951 4/1992 Chen et al 437/187
5,242,530 9/1993 Batey et al 156/613
5,354,715 10/1994 Wang et al 437/238
5,503,874 4/1996 Ackerman et al 427/237
5,614,257 3/1997 Beinglass et al 427/248.1
5,643,633 7/1997 Telford et al 427/255
5,693,139 12/1997 Nishizawa et al 117/89
OTHER PUBLICATIONS
U.S. Patent Application entitled, "Low Temperature Integrated Metallization Process and Apparatus"; filed Nov. 21, 1995; Serial No. 08/561,605; Inventors: Mosely, et al; Attorney Docket No. 1088.
U.S. Patent Application entitled, "Blanket-Selective Deposition Using a Self-aligning Ultra-thin Nucleation Layer"; filed Mar. 5,1996; Serial No. 08/611,108; Inventors: Guo, et al; Attorney Docket No. 1269.
Primary Examiner—Paul P. Gordon
Assistant Examiner—Ramesh Patel
Attorney, Agent, or Firm—Thomason, Moser & Patterson [57] ABSTRACT
The present invention is to a chemical vapor deposition process for depositing a substantially planar, highly reflective layer on a substrate, and is particularly useful for filling high aspect ratio holes in the substrate with metal-containing material. The substrate is placed in a process zone, and successive seeding and oriented crystal growth stages are performed on the substrate. In the seeding stage, the substrate is heated to temperatures Ts, within a first lower range of temperatures A Ts, and a seeding gas is introduced into the process zone. The seeding gas deposits a substantially continuous, non-granular, and planar seeding layer on the substrate. Thereafter, in an oriented crystal growth stage, the substrate is maintained at deposition temperatures Td, within a second higher range of temperatures A TD, and deposition gas is introduced into the process zone. The deposition gas forms an oriented crystal growth layer on the seeding layer, the oriented crystal growth layer having a highly reflective surface that results from highly oriented, relatively large crystals that grow on the seeding layer.
32 Claims, 11 Drawing Sheets
