Semiconductor device capable of generating ripple-free voltage internally

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(12) United States Patent

Chae et al.

(io) Patent No.: (45) Date of Patent:

US 7,072,238 B2 Jul. 4, 2006

(54) SEMICONDUCTOR DEVICE CAPABLE OF GENERATING RIPPLE-FREE VOLTAGE INTERNALLY

(75) Inventors: Dong-Hyuk Chae, Seoul (KR);

Young-Ho Lim, Gyeonggi-do (KR)

(73) Assignee: Samsung Electronics Co., Ltd.,

Suwon-si (KR)

( * ) Notice: Subject to any disclaimer, the term of this patent is extended or adjusted under 35 U.S.C. 154(b) by 0 days.

(21) Appl. No.: 11/025,001

(22) Filed: Dec. 28, 2004

(65) Prior Publication Data

US 2006/0044884 Al Mar. 2, 2006

(30) Foreign Application Priority Data

Sep. 2, 2004 (KR) 10-2004-0069927

(51) Int. CI.

G11C 7/00 (2006.01)

(52) U.S. CI 365/226; 365/189.09; 365/189.07;

365/185.21

(58) Field of Classification Search 365/226,

365/189.09, 189.07, 185.21 See application file for complete search history.

(56) References Cited

U.S. PATENT DOCUMENTS

5,519,656 A 5/1996 Maccarrone et al.

5,642,309 A 6/1997 Kim et al.

5,689,460 A * 11/1997 Ooishi 365/189.07

5,881,014 A * 3/1999 Ooishi 365/226

6,031,778 A * 2/2000 Makino et al 365/226

6,038,178 A * 3/2000 Oh 365/189.09

6,061,270 A 5/2000 Choi

6,335,881 Bl 1/2002 Kim et al.

6,370,062 Bl 4/2002 Choi

FOREIGN PATENT DOCUMENTS

JP 2002-150786 5/2002

KR 2003-0057885 7/2003

OTHER PUBLICATIONS

English language abstract of Korean Publication No. 20030057885.

English language abstract of Japanese Publication No. 2002150786.

* cited by examiner

Primary Examiner—Tuan T. Nguyen

(74) Attorney, Agent, or Firm—Marger Johnson &

McCollom, PC.

A semiconductor device that generates a regulated high voltage. The device includes, a high voltage generation circuit for supplying a high voltage to the first power line, a current bypass circuit for supplying current to a second power line from the first power line, a PMOS transistor coupled between a first power line and the second power line, and a controller for controlling the drive current of the PMOS transistor in response to the voltage on the second power line.

17 Claims, 6 Drawing Sheets

100