(19) United States
(12) Patent Application Publication (io) Pub. No.: US 2005/0009213 Al
Wang et al. (43) Pub. Date: Jan. 13,2005
(54) SUBSTRATE PROCESSING METHOD AND APPARATUS
(76) Inventors: Xinming Wang, Tokyo (JP); Daisuke
Takagi, Tokyo (JP); Akihiko Tashiro,
Tokyo (JP); Akira Fukunaga, Tokyo
WENDEROTH, LIND & PONACK, L.L.P.
2033 K STREET N. W.
WASHINGTON, DC 20006-1021 (US)
(21) Appl. No.: 10/874,245
(22) Filed: Jun. 24, 2004
(30) Foreign Application Priority Data
Jun. 27, 2003 (JP) 2003-185061
(51) Int. CI.7 11011. 21/00
(52) U.S. CI 438/5
There is provided a substrate processing method and apparatus which can measure and monitor the thickness and/or properties of a film formed on a substrate as needed, and quickly correct a deviation in the process conditions, and which can therefore stably provide a product of constant quality. A substrate processing method for processing a substrate with a metal and an insulating material exposed on its surface in such a manner that the film thickness of the metal portion with the exposed surface of the metal as a reference plane is selectively or preferentially changed, including measuring a change in the film thickness and/or a film property of the metal portion during and/or immediately after processing, and monitoring the processing and adjusting the processing conditions based on the results of measurement.