A lateral doped channel. A first doping material is implanted substantially vertically into a region adjacent to a gate structure. A diffusion process diffuses the first doping material into a channel region beneath the gate structure. A second doping material is implanted substantially vertically into...http://www.google.fr/patents/US20040102026?utm_source=gb-gplus-shareBrevet US20040102026 - Lateral doped channel
Numéro de demande: 10/305,724 Numéro de publication: US 2004/0102026 A1 Date de dépôt: 26 nov. 2002 Brevet délivré: US7049188 ( Date de délivrance 23 mai 2006)
