A non-volatile memory device includes at least one semiconductor column having a first sidewall and a second sidewall. The device also includes at least one gate electrode is disposed on the first sidewall and at least one control gate electrode disposed on the second sidewall. The device further includes...http://www.google.fr/patents/US8064254?utm_source=gb-gplus-shareBrevet US8064254 - Columnar non-volatile memory devices with auxiliary transistors and methods of operating the same
Columnar non-volatile memory devices with auxiliary transistors and methods ...