The aperture ratio of a pixel of a reflecting type display device is improved without increasing the number of masks and without using a black mask. Locations for light shielding between pixels are arranged such that a pixel electrode overlaps with a portion of a gate wiring and a source wiring. In locations...http://www.google.fr/patents/US7799590?utm_source=gb-gplus-shareBrevet US7799590 - Semiconductor device and manufacturing method thereof
Semiconductor device and manufacturing method thereof
