Method for manufacturing a semiconductor device

I 1 1 1 1 I 1 1 1 1 I 1 1 1 1 I 1 1

0.0 0.05 0.10 0.15

DEPTH (microns)

I I I I 1 I I I I I ■ ■ i ■ I L

0.0 0.05 0.10 0.15

DEPTH (microns)

1 ■ ■ i i i i i i—i—i—i—i—i—i—i—i—i—i

0.0 0.05 0.10 0.15 0.20

DEPTH (microns)