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Page 5

[table]

FOREIGN PATENT DOCUMENTS

EP 1124262 A2 8/2001

EP 1324376 7/2003

WO WO-2006026716 3/2006

OTHER PUBLICATIONS

Ahn, Kie Y., "Lanthanum Aluminum Oxynitride Dielectric Films",
U.S. Appl. No. 11/216,474, filed Aug. 31, 2005.
Ahn, Kie Y., et al., "Magnesium Litanium Oxide Films", U.S. Appl.
No. 11/189,075, filed Jul. 25,2005.

Alers, G. B., et al., "Intermixing at the tantalum oxide/silicon interface in gate dielectric structures", Applied Physics Letters, 73(11), (Sep. 14, 1998), 1517-1519.

Atanassova, E. , et al., "Breakdown Fields and Conduction Mechanisms in thin La2Os Layers on Si for high density DRAMs", Microelectronics Reliability, 42, (2002), 157-173.

Cava, R. J., et al., "Dielectric Properties of Ta205-Zr02 polycrystalline ceramics", J. Appl. Phys. 83(3), (Feb. 1, 1998), 1613-1616. Cava, R. J., et al., "Improvement of the dielectric properties of Ta2/Os through substitution with A1203", Applied Physics Letters, 70(11), (Mar. 1997),1396-8.

Chaneliere, C. , et al., "Tantalum Pentoxide (Ta2Os) thin films for advanced dielectric applications", Materials Science and EngineeringR22, (269-322),1998.

Chang, J. P., et al., "Dielectric property and conduction mechanism of ultrafhin zirconium oxide films", Applied Physics Letters, 79(22), (Nov. 26, 2001),3666-3668.

Copel, M., etal., "Structure and stability of ultrafhin zirconium oxide layers on Si(001)", Applied Physics Letters, 76(4), (Jan. 2000),436438.

Fleming, R. M., et al., "Defect Dominated Charge Transport in Amorphous Ta2Os thin films", Journal of Applied Physics, 88(2), (Jul. 15, 2000),850-862.

Hori, T , ""MIS Structure", Gate Dielectrics and MOS ULSIs: Principles, Technologies, andApplications", Chapter 2, Springer-Verlag, Inc., New York, Springer Series in Electronics and Photonics 34,(1997),23-74.

Hubbard, K. J., et al., "Thermodynamic stability of binary oxides in contact with silicon", Journal of Materials Research, 11(11), (Nov. 1996),2757-2776.

Jeon, T. S., "Thermal Stability of ultrathin Zr02 films prpared by chemical vapor deposition of Si( 100)", Appl. Phys. Lett., 78(3), (Jan. 15, 2001),368-370.

Joshi, P. C, et al., "Structural and Electrical Properties of Crystalline (1-x) Ta205-xAl203 thin films fabricated by metalorganic solution deposition technique", Appl. Phys. Letters 71(10), (Sep. 8, 1997),1341-1343.

Kang, Chang , et al., "Improved Thermal Stability and Device Per-
formance of Ultra-thin (EOT<10A) Gate Dielectric MOSFETs by
using Hafnium Oxynitride (HfO^N^)", Symposium on VLSI Technol-
ogy Digest of Technical Papers, (2002),146-147.
Kingon, Angus I., etal., "Alternative dielectrics to Silicon dioxide for
Memory and Logic Devices", Nature, vol. 406, (Aug. 31,
2000),1032-1038.

Kukli, Kaupo , "Dielectric Properties of Zirconium Oxide Grown by
Atomic Layer Deposition from Iodide Precursor", Journal of The
Electrochemical Society, 148(12), (2001),F227-F232.
Kukli, Kaupo , et al., "Properties of Ta2Os-Based Dielectric
Nanolaminates Deposited by Atomic Layer Epitaxy", J.
Electrochem. Soc, vol. 144, No. 1, Deptartment of Chemistry, Uni-
versity of Helsinki, FIN-00014, Helsinki, Finland,(Jan. 1997),300-
306.

Kukli, Kaupo , "Tailoring the dielectric properties of Hf02- Ta203
nanolaminates",^/. Phys. Lett., 68, (1996),3737-3739.
Kuo, Yue , et al., "Anomalous TixTayO High K Thin Films", The
Electrochemical Soc. Meeting Abstracts, Abstract 227, vol. 2001-1,
Washington, DC, (Mar. 25-29, 2001),1 page.

Kuo, Yue , et al., "Doped Tantalum Oxide High K Dielectric Thin Films", The Electrochemical Soc. Meeting Abstract, 813, vol. 20002, (Oct. 22-27, 2002), 1 page.

Lu, J., et al., "Hafnium-Doped Tantalum Oxide High-K Dielectrics",
The Electrochemical Soc. Meeting Abstract, Abstract 379, vol. 2002,
Salt Lake City, UT, (Oct. 20-204, 2002), 1 page.
Luan, H. F., et al., "Ultra Thin High Quality Ta2Os Gate Dielectric
Prepared by in-situ Rapid Thermal Processing", Int. Electron
Devices Meeting, (1999),609-612.

Lucovsky, Gerald , et al., "The Effects of Chemical Bonding and Band Offsett Constraints at Si-Dielectric Interfaces on the Integration of Alternative High-K Dielectrics into Aggressively-Scaled CMOS Si Devices", Microelectronic Engineering, 48, (1999),291-294. Manchanda, L., et al., "Multi-component high-K gate dielectrics for the silicon industry", Microelectronic Engineering, 59, (2001),351359.

Miyazaki, Seiichi, "Characterization of high-k gate dielectric/silicon

interfaces", Applied Surface Science 190, (2002),66-74.

Park, Donggun, et al., "SiON/Ta205/TiN Gate-Stack Transistor with

1.8nm Equivalent Si02 Thickness", Int. Electron Devices Meeting,

(1998),381-384.

Qi, Wen-Jie , et al., "MOSCAP and MOSFET characteristics using ZrO/sub 2/gate dielectric deposited directly on Si", International Electron Devices Meeting 1999. Technical Digest, (1999),145-148. Sneh, Ofer, "Thin film atomic layer deposition equipment for semiconductor processing", Thin Solid Films, 402, (2002),248-261. Tewg, J.Y , "Electrical and Physical Characterization of ZirconiumDoped Tantalum Oxide Films", Electrochemical Society Proceedings, vol. 2002-28, (2002),75-81.

Tewg, J. Y, et al., "Electrical and Physical Characterization of Zirconium-doped Tantalum Oxide Films", The Electrochemical Soc. Meeting Abstract, Abstract 376, vol. 2002-2, Salt Lake City, UT, (Oct. 20-24, 2002), 1 page.

Tewg, Jun-Yen , "Electrical and Physical Characterization of Zirconium-Doped Tantalum Oxide Thin Films", Journal of the Electrochemical Society, 151 (3), (2004),F59-F67.

Ulrich, M. D., et al., "Interface electronic structure of Ta2Os—A1203 alloys for Si-field-effect transistor gate dielectric applications", J. Vacuum Sci. Technology, B 20(4), (Jul./Aug. 2002), 1732-1738. Virola, H , "Controlled growth of antimony-doped tin dioxide thin films by atomic layer epitaxy", Thin Solid Films, 251, (Nov. 1994),127-135.

Wilk, G D., et al., "Hafnium and zirconium silicates for advanced gate dielectrics", Journal of Applied Physics, 87(1), (Jan. 2000),484492.

Page 6

Wilk, G. D., "High-K gate dielectrics: Current status and materials properties considerations", Journal of Applied Physics, 89(10), (2001),5243-5275.

Wilk, G. D., et al., "Stable zirconium silicate gate dielectrics deposited directly on silicon"', AppliedPhysics Letters, vol. 76, No. 1, (Jan. 3, 1000),112-114.

Zhang, H, et al., "High permitivity thin filmnanolaminates", Jo«r«a/ of Applied Physics, 87(4), (Feb. 2000), 1921-1924. Leskela, M., "ALD precursor chemistry: Evolution and future challenges", J. Phys. /^France, 9, (1999), 837-852.

* cited by examiner

[graphic][merged small]

2\0

DEPOSIT TANTALUM ONTO A SUBSTRATE
SURFACE BY ATOMIC LAYER DEPOSITION

DEPOSIT ZIRCONIUM BY ATOMIC LAYER
DEPOSITION ONTO THE SUBSTRATE SURFACE

FIG. 2

PULSE A TANTALUM CONTAINING PRECURSOR
TO DEPOSIT TANTALUM ONTO A SUBSTRATE SURFACE

y ^

PULSE AN OXYGEN CONTAINING PRECURSOR
TO DEPOSIT OXYGEN ONTO THE SUBSTRATE SURFACE

y 330

REPEAT FOR A NUMBER OF CYCLES THE PULSING OF THE
TANTALUM CONTAINING PRECURSOR AND THE PULSING OF THE OXYGEN CONTAINING PRECURSOR

SUBSTITUTE A ZIRCONIUM CYCLE FOR ONE OR MORE CYCLES OF THE PULSING OF THE TANTALUM CONTAINING PRECURSOR, THE ZIRCONIUM CONTAINING PRECURSOR TO DEPOSIT ZIRCONIUM ONTO THE SUBSTRATE SURFACE

FIG. 3

410

PULSE A TANTALUM CONTAINING PRECURSOR
TO DEPOSIT TANTALUM ONTO A SUBSTRATE SURFACE

y m

PULSE A ZIRCONIUM CONTAINING PRECURSOR DURING A PORTION
OF THE TIME THAT THE TANTALUM CONTAINING PRECURSOR IS
BEING PULSED TO DEPOSIT ZIRCONIUM BY ATOMIC LAYER DEPOSITION

430

PULSE A REACTANT PRECURSOR TO PROVIDE AN
OXIDIZING REACTION AT THE SUBSTRATE SURFACE

FIG. 4

PREPARE SUBSTRATE

PULSE A TANTALUM CONTAINING PRECURSOR INTO THE REACTION CHAMBER

PULSE A FIRST PURGING GAS INTO THE REACTION CHAMBER

PULSE AN OXYGEN CONTAINING PRECURSOR INTO THE REACTION CHAMBER

-505

-5\o

-5\5 -520

REPEAT FOR A NUMBER OF CYCLES THE PULSING OF THE TANTALUM
CONTAINING PRECURSOR, THE PULSING OF THE OXYGEN CONTAINING
PRECURSOR, AND THE PULSING OF THE ASSOCIATED
FIRST AND SECOND PURGING GASES

PULSE A ZIRCONIUM CONTAINING
PRECURSOR INTO THE REACTION CHAMBER

PULSE A THIRD PURGING GAS INTO THE REACTION CHAMBER

PULSE A REACTANT PRECURSOR INTO THE REACTION CHAMBER,
THE REACTANT PRECURSOR SELECTED TO PRODUCE AN OXIDIZING
REACTION FOR THE ZIRCONIUM AT THE SUBSTRATE SURFACE

PULSE A SECOND PURGING GAS INTO THE REACTION CHAMBER

530

-535

-540

-545

PULSE A FOURTH PURGING GAS INTO THE REACTION CHAMBER h-550

[graphic]
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